bc80 7 -xx lt1 transistor (pnp) feature ldeally suited for automatic insertion epitaxial planar die construction complementary npn type available(bc817) electrical characteristics (t a=25 unless otherwise specified) parameter symbol t est conditions min max unit collector-base breakdown voltage v cbo i c = -10 a, i e =0 -50 v collector-emitter breakdown voltage v ceo i c = -10ma, i b =0 -45 v emitter-base breakdown voltage v ebo i e = -1 a, i c =0 -5 v collector cut-off current i cbo v cb = -45v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -0.1 a dc current gain h fe(2) h fe(1) v ce = -1v, i c = -100ma 100 6 00 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b = -50ma -0.7 v base-emitter saturation voltage v be (sat) i c = -500ma, i b = -50ma -1.2 v transition frequency f t v ce = -5v, i c = -10ma f= 100mhz 100 mhz so t -23 1. base 2. emitter 3. collector v ce = -1v, i c = - 5 00ma 4 0 classification of h fe (1) rank bc8 0 7-16 bc8 0 7-25 bc8 0 7-40 range 100-250 160-400 250-600 marking 5 a 5 b 5 c 1 f,jun,2016 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 50 v v ceo collector - emitter voltage - 45 v v ebo emitter - base voltage - 5 v i c collector current - 500 m a p c collector power dissipation 300 m w r ja thermal resistance fro m j u nction to a mbient 417 /w t j junction temperature 150 t stg storage temperature - 55 + 150 tiger electronic co.,ltd
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 -1 -10 -100 -1000 051 0 1 10 100 11 0 10 100 11 01 0 0 100 200 300 400 500 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 -0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 -0.0 -0.1 -0.2 -0.3 -0.4 0246810121416 0 40 80 120 160 200 240 280 - - - - v ce =-1v t a =25 t a =100 o c base-emitter voltage v be (v) collector current i c (ma) i c ?? v be f=1mhz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 50 - - transition frequency f t (mhz) collector current i c (ma) v ce =-5v t a =25 o c i c f t ?? - 60 300 - 500 - 500 - - - v ce = -1v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? - 500 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a t a =100 -- - - - - collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? t a =25 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (v) collector current i c (ma) common emitter t a =25 - - - - - -- - - - - - - - - - - - - -1ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma -0.2ma i b =-0.1ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic - 2 typical characteristics f,jun,2016
min m a x min max a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 8 0.550 ref 0.022 ref symbol dimensions in inches dimensions in millimeters 0.950 typ 0.037 typ so t -23 package outline dimensions so t -23 suggested pad layout 3 f,jun,2016
|
